2
RF Device Data
Freescale Semiconductor
MRFE6S9205HR3 MRFE6S9205HSR3
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22-A114)
Class 1C (Minimum)
Machine Model (per EIA/JESD22-A115)
Class B (Minimum)
Charge Device Model (per JESD22-C101)
Class IV (Minimum)
Table 4. Electrical Characteristics (TC
= 25
°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS
= 66 Vdc, V
GS
= 0 Vdc)
IDSS
?
?
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS
= 28 Vdc, V
GS
= 0 Vdc)
IDSS
?
?
1
μAdc
Gate-Source Leakage Current
(VGS
= 5 Vdc, V
DS
= 0 Vdc)
IGSS
?
?
10
μAdc
On Characteristics
Gate Threshold Voltage
(VDS
= 10 Vdc, I
D
= 600
μAdc)
VGS(th)
1.4
2.1
2.9
Vdc
Gate Quiescent Voltage
(VDD
= 28 Vdc, I
D
= 1400 mAdc, Measured in Functional Test)
VGS(Q)
2.2
2.9
3.7
Vdc
Drain-Source On-Voltage
(VGS
= 10 Vdc, I
D
= 4.2 Adc)
VDS(on)
0.1
0.2
0.3
Vdc
Dynamic Characteristics (1)
Reverse Transfer Capacitance
(VDS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Crss
?
1.63
?
pF
Output Capacitance
(VDS
=
28
Vdc ±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Coss
?
590
?
pF
Input Capacitance
(VDS
= 28 Vdc, V
GS
= 0 Vdc
±
30 mV(rms)ac @ 1 MHz)
Ciss
?
491
?
pF
Functional Tests
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 1400 mA, P
out
= 58 W Avg. W-CDMA, f = 880 MHz,
Single-Carrier W-CDMA, 3.84 MHz Channel Bandwidth Carrier. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset.
PAR = 7.5 dB @ 0.01% Probability on CCDF.
Power Gain
Gps
20
21.2
23
dB
Drain Efficiency
ηD
32
34
?
%
Output Peak-to-Average Ratio @ 0.01% Probability on CCDF
PAR
6
6.3
?
dB
Adjacent Channel Power Ratio
ACPR
?
-39.1
-37.5
dBc
Input Return Loss
IRL
?
-12.5
-8.5
dB
1. Part is internally matched on input.
(continued)
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